Description
Datasheet VRRM = 45 V - 100 V. IF(AV) = 200 A. Features. High Surge Capability. Twin Tower Package. Not ESD Sensitive. Parameter. Symbol. MBR20045CT (R) VRRM = 20 V - 100 V. IF = 200 A. Features. High Surge Capability. Twin Tower Package. Types up to 100 V VRRM. Parameter. Symbol. MBR20045CT (R) 224CNQ035. MBR20035CT. 200CNQ040. 224CNQ040. MBR20040CT. 200CNQ045. 224CNQ045. MBR20045CT . January, 2010 - Rev. 4 www. microsemi.com
Part Number | MBR20045CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Arrays |
Brand | ON Semiconductor |
Description | DIODE MODULE 45V 200A 2TOWER |
Series | - |
Packaging | Bulk |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 45V |
Current - Average Rectified (Io) (per Diode) | 200A (DC) |
Voltage - Forward (Vf) (Max) @ If | 650mV @ 100A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 5mA @ 20V |
Operating Temperature - Junction | - |
Mounting Type | Chassis Mount |
Package / Case | Twin Tower |
Supplier Device Package | Twin Tower |
Image |
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