Description
Junction Temperature. TJ. -55 to +125. C. Storage Temperature Range. Tstg. -55 to +150. C. Stresses exceeding Maximum Ratings may damage the device. FEATURES. Trench MOS Schottky technology. Lower power losses, high efficiency. Low forward voltage drop. High forward surge capability. SPK ELECTRONICS CO., LTD. The crystal shall meet electrical characteristics and suffer no physical damage after being subject to the following conditions.
Part Number | MBR0503 |
Brand | ON Semiconductor |
Image |
MBR0504T1G
ONSEMICON
3000
1.09
KDH SEMICONDUCTOR CO., LIMITED
MBR0504T1G
ON/ST
9000
2.0175
AIC Semiconductor Co., Limited
MBR0504T1G
ON/CMD
4000
2.945
CIS Ltd (CHECK IC SOLUTION LIMITED)
MBR0504T1G
ON/SANYO
100
3.8725
Yingxinyuan INT'L (Group) Limited
MBR0504T1G
ONSEM
5000
4.8
Ande Electronics Co., Limited