Part Number | JAN2N3636L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS PNP 175V 1A |
Series | Military, MIL-PRF-19500/357 |
Packaging | Bulk |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 175V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |
Image |
JAN2N3636L
ONSEMICON
6688
1.87
MY Group (Asia) Limited
Jan2N3636L
ON/ST
166
2.8025
Ande Electronics Co., Limited
JAN2N3009
ON/CMD
4197
3.735
Wide Key International Limited
JAN2N3019
ON/SANYO
965
4.6675
MY Group (Asia) Limited
JAN2N3019
ONSEM
8211
5.6
Belt (HK) Electronics Co