Part Number | IRLW630ATM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 9A I2PAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 69W (Tc) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRLW630ATM
ONSEMICON
20000
1.46
Yingxinyuan INT'L (Group) Limited
IRLW630ATM
ON/ST
1000
2.4075
MY Group (Asia) Limited
IRLW630ATM
ON/CMD
10000
3.355
Far East Electronics Technology Limited
IRLW630ATM
ON/SANYO
70000
4.3025
ALPINE ELECTRONICS LTD
IRLW630ATM
ONSEM
3000
5.25
Amos Electronics Co., Limited