Part Number | IRLW510ATM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 5.6A I2PAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 37W (Tc) |
Rds On (Max) @ Id, Vgs | 440 mOhm @ 2.8A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRLW510ATM
ONSEMICON
1000
1.07
MY Group (Asia) Limited
IRLW510ATM
ON/ST
16000
1.8375
Finestock Electronics HK Limited
IRLW510ATM
ON/CMD
18650
2.605
Fairstock HK Limited
IRLW510ATM
ON/SANYO
3000
3.3725
KK Wisdom Limited
IRLW510A
ONSEM
41829
4.14
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED