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Description
Datasheet Dec 1, 2013 December 2013. IRL640A . N-Channel Logic Level A-FET. 200 V, 18 A, 180 m . Description. IRL640A . N-Channel Logic Level A-FET. Document Number: 91305 www.vishay.com. S11-0519-Rev. B, 21-Mar-11. 1. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED Jul 14, 2015 Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. IRL640A . IRL640A . TO220-3 (93.5-5-. 1.5DA_AlBW). Jul 14, 2015 IRL640A . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ. FSSZ. 2.033009. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. lntemational. E Recti er. HEXFET Power MOSFET. PD-9.1089. IHL64O. Dynamic dv/dt Rating. Repetitive Avalanche Rated. Logic-Level Gate Drive. Rpswn)
| Part Number | IRL640A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 200V 18A TO-220 |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1705pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 9A, 5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
IRL640A
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7720
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21445
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ON/CMD
20000
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49800
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