(4/5) based on 17 customer reviews
Description
E Rectifier IRFZ44 . HEXFET Power MOSFET. 0 Dynamic dv/dt Rating. 0 175 C Operating Temperature D _ . Fast Switching Voss 60V. 0 Ease of Paralleling IRFZ44 . SiHFZ44. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. 60. Page 1. IRFZ44N. HEXFET Power MOSFET. 01/03/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 1.5. R CS. Case-to-Sink, Flat, Greased Improved high temperature reliability. TO-220. IRFZ44 /IRFZ45. IRFZ40/IRFZ42. PRODUCT SUMMARY. Part Number. VDS. RDS(on). ID. IRFZ44 . 60V. 0.028 . Sep 15, 2008 1.6 mm from case. e. Calculated continuous current based on maximum allowable junction temperature. f. Uses IRFZ44 , SiHFZ44 data and test
| Part Number | IRFZ44R |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 60V 50A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 31A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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