Description
MOSFET N-CH 75V 209A TO247AC Series: HEXFET? Amplifier Type: -55°C ~ 175°C (TJ) Applications: Through Hole Capacitance: TO-247-3
Part Number | IRFP2907PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 75V 209A TO247AC |
Series | HEXFET |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 209A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 620nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 470W (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 125A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |
Image |
Hot Offer
IRFP2907PBF
ONSEM
2000
5.42
Shenzhen Hua Xin Jie Electronic Co., LTD
IRFP2907PBF
ONSEMICON
2200
1.44
HK HEQING ELECTRONICS LIMITED
IRFP2907PBF
ON/ST
1200
2.435
WIN AND WIN ELECTRONICS LIMITED
IRFP2907PBF
ON/CMD
4000
3.43
Belt (HK) Electronics Co
IRFP2907PBF
ON/SANYO
5000
4.425
Hk Guoyuan Electronics Technology Limited