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Description
IRF740B www.vishay.com. Vishay Siliconix. S16-0799-Rev. B, 02-May-16. 1. Document Number: 91519. For technical questions, contact: hvm@vishay.com. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Dec 14, 2004 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 33 . ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Aug 30, 2012 This document describes the characteristics and features of a 185 W, wide input mains range, power-factor-corrected, demonstration board for
| Part Number | IRFI740BTU |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 400V 10A I2PAK |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 134W (Tc) |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
| Image |  |
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