Description
Aug 14, 2002 IRFBA1405P . 2 www.irf.com. Parameter. Min. Typ. Max. Units. Conditions. V(BR) DSS. Drain-to-Source Breakdown Voltage. 55. . V.
Part Number | IRFBA1405P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 55V 174A SUPER-220 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 174A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5480pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 330W (Tc) |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 101A, 10V |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | SUPER-220,(TO-273AA) |
Package / Case | Super-220,3 (Straight Leads) |
Image |
IRFBA1405P
ONSEMICON
2000
0.43
SeeMe Technology Co., LTD
IRFBA1405P
ON/ST
6647
1.3675
E-Core Electronics Co.
IRFBA1405P
ON/CMD
3347
2.305
Belt (HK) Electronics Co
IRFBA1405P
ON/SANYO
11010
3.2425
Ande Electronics Co., Limited
IRFBA1405P
ONSEM
1210
4.18
Nosin (HK) Electronics Co.