(5/5) based on 3 customer reviews
Description
DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the May 25, 2001 2SK3085. MTP5N40E 400 ON Semi NONE Toshiba. 2SK2679 FAIRCHILD FQPF9N50. IRF710 . 400 ON Semi NONE. IR. IRF710 . IRF720. Jun 10, 2004 Description. Fourth Generation HEXFETs from International. Rectifier utilize advanced processing techniques to achieve the lowest possible DESCRIPTION. Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area.
| Part Number | IRF710 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 400V 2A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
IRF710
ONSEMICON
15775
0.75
HK HEQING ELECTRONICS LIMITED
IRF710
ON/ST
12500
1.765
Bonase Electronics (HK) Co., Limited
IRF710
ON/CMD
12000
2.78
N&S Electronic Co., Limited
IRF710
ON/SANYO
3470
3.795
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF710
ONSEM
5000
4.81
Gallop Great Holdings (Hong Kong) Limited
