Part Number | IRF6710S2TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 25V 12A DIRECTFET |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 13V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta), 15W (Tc) |
Rds On (Max) @ Id, Vgs | 5.9 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET S1 |
Package / Case | DirectFET,Isometric S1 |
Image |
IRF6710S2TRPBF
ONSEMICON
8922
1.28
Shenzhen Chuangli Hengda Technology Co., Ltd
IRF6710S2TRPBF
ON/ST
3366
2.4125
Pujia Electronics Technology Co., Limited
IRF6710S2TRPBF
ON/CMD
4497
3.545
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF6710S2TRPBF
ON/SANYO
9967
4.6775
Hong Kong Capital Industrial Co.,Ltd
IRF6710S2TRPBF
ONSEM
1008
5.81
Hong Kong Gihe Electronics Co., Limited