Part Number | IPW90R800C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 900V 6.9A TO-247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 460µA |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 104W (Tc) |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 4.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW90R800C3
ONSEMICON
30000
1.43
Superior Electronics Limited
IPW90R800C3
ON/ST
30000
2.03
QUARKTWIN TECHNOLOGY LIMITED
IPW90R800C3
ON/CMD
132706
2.63
Kunlida Electronics (HK) Limited
IPW90R800C3
ON/SANYO
58
3.23
Yingxinyuan INT'L (Group) Limited
IPW90R800C3
ONSEM
16000
3.83
Finestock Electronics HK Limited