Description
MOSFET 2N-CH 8TDSON Series: Automotive, AEC-Q101, OptiMOS? FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 20A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20米A Gate Charge (Qg) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) @ Vds: 2260pF @ 25V Power - Max: 50W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10
Part Number | IPG20N06S415AATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ON Semiconductor |
Description | MOSFET 2N-CH 8TDSON |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | 2 N-Channel (Dual) |
FET Type | Cut Tape (CT) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 4V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 25V |
Power - Max | 50W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-10 |
Image |
IPG20N06S415AATMA1
ONSEMICON
46000
1.33
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPG20N06S415AATMA1
ON/ST
5000
2.1575
Shenzhen Hongying Micro Technology Co., Ltd
IPG20N06S415AATMA1
ON/CMD
4000
2.985
Hongkong Yunling Electronics Co.,Limited
IPG20N06S415AATMA1
ON/SANYO
11400
3.8125
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPG20N06S415AATMA1
ONSEM
5000000
4.64
Hongkong Shengshi Electronics Limited