Part Number | IPD60R1K5CEAUMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 650V 5A TO252 |
Series | CoolMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 49W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.1A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO-252 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R1K5CEAUMA1
ONSEMICON
55100
1.61
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD60R1K5CEAUMA1
ON/ST
5000000
2.555
Hongkong Shengshi Electronics Limited
IPD60R1K5CEAUMA1
ON/CMD
3000
3.5
HONGKONG SINIKO ELECTRONIC LIMITED
IPD60R1K5CEAUMA1
ON/SANYO
3603
4.445
Hongkong Yunling Electronics Co.,Limited
IPD60R1K5CEAUMA1
ONSEM
177779
5.39
Cicotex Electronics (HK) Limited