Part Number | IPD50N03S4L06ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 30V 50A TO252-3 |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2330pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 56W (Tc) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3-11 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
Hot Offer
IPD50N03S4L06ATMA1
ONSEM
3579
6.53
Shenzhen Fuxinwei Semiconductor Co., Ltd
IPD50N03S4L06ATMA1
ONSEMICON
6017
1.39
Shenzhen Hongying Micro Technology Co., Ltd
IPD50N03S4L06ATMA1
ON/ST
9456
2.675
LIXINC Electronics Co., Limited
IPD50N03S4L06ATMA1
ON/CMD
8338
3.96
Hongkong Shengshi Electronics Limited
IPD50N03S4L06ATMA1
ON/SANYO
8228
5.245
Shenzhen WTX Capacitor Co., Ltd.