Part Number | IGW30N100TFKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 1000V 60A 412W TO247-3 |
Series | TrenchStop |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1000V |
Current - Collector (Ic) (Max) | 60A |
Current - Collector Pulsed (Icm) | 90A |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
Power - Max | 412W |
Switching Energy | 3.8mJ |
Input Type | Standard |
Gate Charge | 217nC |
Td (on/off) @ 25°C | 33ns/535ns |
Test Condition | 600V, 30A, 16 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | PG-TO247-3 |
Image |
IGW30N100TFKSA1
ONSEMICON
5523
0.79
Dedicate Electronics (HK) Limited
IGW30N60T
ON/ST
591
1.66
JFJ Electronics Co.,Limited
IGW30N60T
ON/CMD
840
2.53
Hong Kong In Fortune Electronics Co., Limited
IGW30N60H3FKSA1
ON/SANYO
63
3.4
Takson Electronics (H.K.) Co., Ltd.
IGW30N100T
ONSEM
10800
4.27
Bonase Electronics (HK) Co., Limited