Description
CHARACTERISTICS TC = 25 C. SYMBOL. TEST CONDITIONS. MINIMUM TYPICAL MAXIMUM UNITS. V(BR)CEO. IC = 100 nA . 10. V. V(BR)CBO. IC = 100 nA . Apr 28, 2014 Symbol Parameter. Conditions. Min Typ Max Unit. V(BR)CBO collector-base breakdown voltage. IC = 100 nA ; IE = 0 mA. 24. -. -. V. V(BR)CEO. Mar 5, 2014 Symbol Parameter. Conditions. Min Typ Max Unit. V(BR)CBO collector-base breakdown voltage. IC = 100 nA ; IE = 0 mA. 24. -. -. V. V(BR)CEO. Mar 5, 2014 Symbol Parameter. Conditions. Min Typ Max Unit. V(BR)CBO collector-base breakdown voltage. IC = 100 nA ; IE = 0 mA. 24. -. -. V. V(BR)CEO. Jan 13, 2014 Symbol Parameter. Conditions. Min Typ Max Unit. V(BR)CBO collector-base breakdown voltage. IC = 100 nA ; IE = 0 mA. 24. -. -. V. V(BR)CEO.
Part Number | IC100NA |
Brand | ON Semiconductor |
Image |
IC100NA
ONSEMICON
9000
0.69
Fairstock HK Limited
IC100NA
ON/ST
2500
1.645
HK HEQING ELECTRONICS LIMITED
IC100NA
ON/CMD
16200
2.6
Pujia Electronics Technology Co., Limited
IC100NA
ON/SANYO
912
3.555
Yingxinyuan INT'L (Group) Limited
IC100NA
ONSEM
5950
4.51
Cicotex Electronics (HK) Limited