Part Number | HUF76629D3ST |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 20A DPAK |
Series | UltraFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1285pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
HUF76629D3ST
ONSEMICON
5859
0.28
HK HEQING ELECTRONICS LIMITED
HUF76629D3ST
ON/ST
18703
1.1525
Chipskey Technology CO.,LTD
HUF76629D3ST
ON/CMD
12500
2.025
ShenZhen Yuxin Technology Co.,Ltd
HUF76629D3ST
ON/SANYO
37638
2.8975
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
HUF76629D3ST
ONSEM
9500
3.77
Cicotex Electronics (HK) Limited