Part Number | HUF76629D3S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 20A DPAK |
Series | UltraFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1285pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
HUF76629D3S
ONSEMICON
5343
0.9
Shenzhen Qiangneng Electronics Co., Ltd.
HUF76629D3S
ON/ST
7606
2.0125
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
HUF76629D3S
ON/CMD
1370
3.125
Hongkong Shengshi Electronics Limited
HUF76629D3S
ON/SANYO
474
4.2375
Belt (HK) Electronics Co
HUF76629D3S
ONSEM
6899
5.35
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED