Part Number | HUF76609D3S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 10A DPAK |
Series | UltraFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 425pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 49W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
HUF76609D3S
ONSEMICON
1079
0.64
Hongkong Shengshi Electronics Limited
HUF76609D3S
ON/ST
3225
1.5
Shenzhen Qiangneng Electronics Co., Ltd.
HUF76609D3S
ON/CMD
6621
2.36
MASSTOCK ELECTRONICS LIMITED
HUF76609D3S
ON/SANYO
8389
3.22
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
HUF76609D3S
ONSEM
1255
4.08
Cicotex Electronics (HK) Limited