Part Number | HGTP2N120CN |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 1200V 13A 104W TO220AB |
Series | - |
Packaging | Tube |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 13A |
Current - Collector Pulsed (Icm) | 20A |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 2.6A |
Power - Max | 104W |
Switching Energy | 96µJ (on), 355µJ (off) |
Input Type | Standard |
Gate Charge | 30nC |
Td (on/off) @ 25°C | 25ns/205ns |
Test Condition | 960V, 2.6A, 51 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
HGTP2N120CN
ONSEMICON
4544
0.61
Viassion Technology Co., Limited
HGTP2N120CN
ON/ST
1145
1.8925
Xinye International Technology Limited
HGTP2N120CN
ON/CMD
3858
3.175
Belt (HK) Electronics Co
HGTP2N120CN
ON/SANYO
195
4.4575
Yingxinyuan INT'L (Group) Limited
HGTP2N120CN_NL
ONSEM
14450
5.74
CIS Ltd (CHECK IC SOLUTION LIMITED)