Part Number | HGTP12N60A4D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 600V 54A 167W TO220AB |
Series | - |
Packaging | Tube |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 54A |
Current - Collector Pulsed (Icm) | 96A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
Power - Max | 167W |
Switching Energy | 55µJ (on), 50µJ (off) |
Input Type | Standard |
Gate Charge | 78nC |
Td (on/off) @ 25°C | 17ns/96ns |
Test Condition | 390V, 12A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 30ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
HGTP12N60A4D
ONSEMICON
9385
1.6
Bonase Electronics (HK) Co., Limited
HGTP12N60A4D
ON/ST
8012
2.18
NOSIN (HK) ELECTRONICS CO., LIMITED
HGTP12N60A4D
ON/CMD
2164
2.76
N&S Electronic Co., Limited
HGTP12N60A4D
ON/SANYO
1959
3.34
WIN AND WIN ELECTRONICS LIMITED
HGTP12N60A4D
ONSEM
743
3.92
Useta Tech (HK) Limited