Part Number | HGTG30N60B3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 600V 60A 208W TO247 |
Series | - |
Packaging | Tube |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 60A |
Current - Collector Pulsed (Icm) | 220A |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
Power - Max | 208W |
Switching Energy | 500µJ (on), 680µJ (off) |
Input Type | Standard |
Gate Charge | 170nC |
Td (on/off) @ 25°C | 36ns/137ns |
Test Condition | 480V, 30A, 3 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
HGTG30N60B3
ONSEMICON
2123
0.24
Xinye International Technology Limited
HGTG30N60B3
ON/ST
2000
1.245
Belt (HK) Electronics Co
HGTG30N60B3
ON/CMD
471
2.25
WIN AND WIN ELECTRONICS LIMITED
HGTG30N60B3
ON/SANYO
49850
3.255
Z.H.T TECHNOLOGY HK LIMITED
HGTG30N60B3_NL
ONSEM
21000
4.26
Ande Electronics Co., Limited