(5/5) based on 2 customer reviews
Description
The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is Jan 8, 2016 Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site . Weight*. UOM. Unit Type. HGTG30N60A4 . HGTG30N60A4 . Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. HGTG30N60A4 . TO247-3. FSSZ. FSSZ. 5.456725. NA. Nov 16, 2007 November 16, 2008. HGTG30N60A4_NL. HGTG30N60A4 . Fairchild Semiconductor. May 16, 2008. November 16, 2008. HGTG30N60B3D_NL.
| Part Number | HGTG30N60A4 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | ON Semiconductor |
| Description | IGBT 600V 75A 463W TO247 |
| Series | - |
| Packaging | Tube |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 75A |
| Current - Collector Pulsed (Icm) | 240A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A |
| Power - Max | 463W |
| Switching Energy | 280µJ (on), 240µJ (off) |
| Input Type | Standard |
| Gate Charge | 225nC |
| Td (on/off) @ 25°C | 25ns/150ns |
| Test Condition | 390V, 30A, 3 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Image |  |
HGTG30N60A4
ONSEMICON
4500
0.41
Ysx Tech Co., Limited
HGTG30N60A4
ON/ST
424
1.2775
FLOWER GROUP(HK)CO.,LTD
HGTG30N60A4
ON/CMD
1406
2.145
Nosin (HK) Electronics Co.
HGTG30N60A4
ON/SANYO
6300
3.0125
SUMMER TECH(HK) LIMITED
HGTG30N60A4
ONSEM
52
3.88
Yingxinyuan INT'L (Group) Limited
