Part Number | HGTG10N120BND |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 1200V 35A 298W TO247 |
Series | - |
Packaging | Tube |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 35A |
Current - Collector Pulsed (Icm) | 80A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Power - Max | 298W |
Switching Energy | 850µJ (on), 800µJ (off) |
Input Type | Standard |
Gate Charge | 100nC |
Td (on/off) @ 25°C | 23ns/165ns |
Test Condition | 960V, 10A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 70ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
HGTG10N120BND
ONSEMICON
4264
0.94
HK HEQING ELECTRONICS LIMITED
HGTG10N120BND
ON/ST
631
2.3475
SUMMER TECH(HK) LIMITED
HGTG10N120BND
ON/CMD
3422
3.755
CIS Ltd (CHECK IC SOLUTION LIMITED)
HGTG10N120BND
ON/SANYO
1435
5.1625
N&S Electronic Co., Limited
HGTG10N120BND
ONSEM
2471
6.57
Belt (HK) Electronics Co