Part Number | HGT1S7N60A4DS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 600V 34A 125W TO263AB |
Series | - |
Packaging | Tube |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 34A |
Current - Collector Pulsed (Icm) | 56A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A |
Power - Max | 125W |
Switching Energy | 55µJ (on), 60µJ (off) |
Input Type | Standard |
Gate Charge | 37nC |
Td (on/off) @ 25°C | 11ns/100ns |
Test Condition | 390V, 7A, 25 Ohm, 15V |
Reverse Recovery Time (trr) | 34ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB |
Image |
Hot Offer
HGT1S7N60A4DS
ONSEM
2000
4.18
HK HEQING ELECTRONICS LIMITED
HGT1S7N60A4DS
ONSEMICON
340
0.43
Acon Electronics Limited
HGT1S7N60A4DS
ON/ST
424
1.3675
WIN AND WIN ELECTRONICS LIMITED
HGT1S7N60A4DS
ON/CMD
2844
2.305
Nosin (HK) Electronics Co.
HGT1S7N60A4DS
ON/SANYO
2680
3.2425
Belt (HK) Electronics Co