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Part Number | HGT1S2N120CN |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 1200V 13A 104W I2PAK |
Series | - |
Packaging | Tube |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 13A |
Current - Collector Pulsed (Icm) | 20A |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 2.6A |
Power - Max | 104W |
Switching Energy | 96µJ (on), 355µJ (off) |
Input Type | Standard |
Gate Charge | 30nC |
Td (on/off) @ 25°C | 25ns/205ns |
Test Condition | 960V, 2.6A, 51 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Supplier Device Package | TO-262 |
Image | ![]() |
HGT1S2N120CN
ONSEMICON
4521
1.87
Xinye International Technology Limited
HGT1S2N120CN
ON/ST
500
2.78
HK HEQING ELECTRONICS LIMITED
HGT1S2N120CN
ON/CMD
21000
3.69
CIS Ltd (CHECK IC SOLUTION LIMITED)
HGT1S2N120CN
ON/SANYO
3260
4.6
ONSTAR ELECTRONICS CO., LIMITED
HGT1S2N120CN
ONSEM
43900
5.51
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED