Description
Product Overview. FSB660A : PNP Low Saturation Transistor. For complete documentation, see the data sheet. These devices are designed with high current Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site . Weight*. UOM. Unit Type. FSB660A . FSB660A . SSOT-3. (EutecticAuBW-G). R41. 10K. R35. 2.2. C49. 0.1UF. TP16. PHB GT1. Q9. FSB660A . 1. 2. 3. TP20. P_GT1. R31. 10K. P_Gate_1. P_Gate_2. +12V. +12V. +12V. T6. GT04-111-063-_ . 2. 200. 0.32. 2000. 50. SuperSOT. FSB649. NPN. General Purpose. 25. 35. 5. 3. 100. 300. 2. 1000. 0.6. 3000. 300. SuperSOT. FSB660A . PNP. General Purpose.
Part Number | FSB660A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS PNP 60V 2A SSOT-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 500mA, 2V |
Power - Max | 500mW |
Frequency - Transition | 75MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | 3-SSOT |
Image |
FSB660A
ONSEMICON
5000000
0.27
Hongkong Shengshi Electronics Limited
FSB660A
ON/ST
13599
0.69
Lattice International Trading Co., Limited
FSB660A
ON/CMD
8500
1.11
SUMMER TECH(HK) LIMITED
FSB660A
ON/SANYO
35200
1.53
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FSB660A
ONSEM
3000
1.95
Hong Kong Capital Industrial Co.,Ltd