Part Number | FQU8P10TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 100V 6.6A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
Rds On (Max) @ Id, Vgs | 530 mOhm @ 3.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU8P10TU
ONSEMICON
241471
1.37
HK HEQING ELECTRONICS LIMITED
FQU8P10TU
ON/ST
39086
2.59
Ysx Tech Co., Limited
FQU8P10TU
ON/CMD
55300
3.81
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQU8P10TU
ON/SANYO
5000
5.03
HITO TECHNOLOGY LIMITED
FQU8P10TU
ONSEM
9000
6.25
SUMMER TECH(HK) LIMITED