Description
Nov 1, 2013 November 2013. Thermal Characteristics. Symbol. Parameter. FQU5N40TU . Unit . R JC. Thermal Resistance, Junction to Case, Max. 2.78. Jul 14, 2015 FQU5N40TU . TO251-3 (IPAK). Jul 14, 2015. 1.0. FSSZ. 0.383556 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQU5N40TU . TO251-3 (IPAK). FSSZ. FSSZ. 0.383556.
Part Number | FQU5N40TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 400V 3.4A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 400V |
Current - Continuous Drain (Id) @ 25°C | 3.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 1.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU5N40TU
ONSEMICON
21623
0.52
HK HEQING ELECTRONICS LIMITED
FQU5N40TU
ON/ST
55100
1.385
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQU5N40TU
ON/CMD
5040
2.25
Belt (HK) Electronics Co
FQU5N40TU
ON/SANYO
4990
3.115
WIN AND WIN ELECTRONICS LIMITED
FQU5N40TU
ONSEM
33151
3.98
ATLANTIC TECHNOLOGY LIMITED