Part Number | FQU2N60TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 2A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU2N60TU
ONSEMICON
1000
1.66
MY Group (Asia) Limited
FQU2N60TU
ON/ST
18000
2.8375
MASSTOCK ELECTRONICS LIMITED
FQU2N60TU
ON/CMD
10164
4.015
Hongkong K.L.N Electronic Technology Co., Ltd.
FQU2N60
ON/SANYO
50000
5.1925
Yingxinyuan INT'L (Group) Limited
FQU2N60CTU
ONSEM
55680
6.37
C&G Electronics (HK) Co., Ltd