Part Number | FQU1N80TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 1A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
Rds On (Max) @ Id, Vgs | 20 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU1N80TU
ONSEMICON
1758
0.84
HK HEQING ELECTRONICS LIMITED
FQU1N80TU
ON/ST
8922
1.45
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQU1N80TU
ON/CMD
5930
2.06
HITO TECHNOLOGY LIMITED
FQU1N80TU
ON/SANYO
870
2.67
Acon Electronics Limited
FQU1N80TU
ONSEM
3081
3.28
WIN AND WIN ELECTRONICS LIMITED