Part Number | FQU13N06TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 10A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
Rds On (Max) @ Id, Vgs | 140 mOhm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU13N06TU
ONSEMICON
1000
0.83
MY Group (Asia) Limited
FQU13N06TU
ON/ST
18000
1.6275
MASSTOCK ELECTRONICS LIMITED
FQU13N06LTU
ON/CMD
9300
2.425
Belt (HK) Electronics Co
FQU13N10LTU
ON/SANYO
2518
3.2225
Nosin (HK) Electronics Co.
FQU13N06LTU
ONSEM
5540
4.02
Hongkong Rixin International Trading Company