Part Number | FQU10N20TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 7.6A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 3.8A, 10V |
Operating Temperature | - |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU10N20TU
ONSEMICON
9453
0.11
MY Group (Asia) Limited
FQU10N20TU
ON/ST
9042
0.7475
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQU10N65C
ON/CMD
5259
1.385
Yingxinyuan INT'L (Group) Limited
FQU10N20CTU
ON/SANYO
3812
2.0225
Yu Hong Technologies Limited
FQU10N20CTU
ONSEM
1373
2.66
Hongkong Rixin International Trading Company