Part Number | FQU10N20LTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 7.6A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU10N20LTU
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