Part Number | FQT1N80TF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 0.2A SOT-223 |
Series | QFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Tc) |
Rds On (Max) @ Id, Vgs | 20 Ohm @ 100mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223-3 |
Package / Case | TO-261-4, TO-261AA |
Image |
FQT1N80TF
ONSEMICON
2889
1.02
IC Chip Co., Ltd.
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6924
2.16
MAXTRONIC GLOBAL LIMITED
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7748
3.3
Yingxinyuan INT'L (Group) Limited
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4.44
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
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3662
5.58
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED