Description
Datasheet Nov 1, 2013 6 /? + J . Thermal Resistance, Junction-to-Ambient, Max. - &. 6 /? Symbol. Parameter. FQPF9P25 . Unit. VDSS. Drain-Source Voltage. -250. V. Jul 14, 2015 Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site . Weight*. UOM. Unit Type. FQPF9P25 . FQPF9P25 . TO220F-3. 1. Publication Order Number: TLV431A/D. Semiconductor Components Industries, LLC, 2015. June, 2015 Rev. 20. TLV431A, TLV431B,. TLV431C
Part Number | FQPF9P25 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 250V 6A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1180pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 620 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF9P25
ONSEMICON
5000
1.73
HITO TECHNOLOGY LIMITED
FQPF9P25
ON/ST
3155
2.375
C&Z Electronic Hongkong Co., Limited
FQPF9P25
ON/CMD
16419
3.02
HK HEQING ELECTRONICS LIMITED
FQPF9P25
ON/SANYO
10000
3.665
Sino Star Electronics (HK) Co.,Limited
FQPF9P25
ONSEM
82
4.31
Gallop Great Holdings (Hong Kong) Limited