Part Number | FQPF9N25CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 250V 8.8A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF9N25CT
ONSEMICON
186
0.45
HONG KONG HORNG SHING LIMITED
FQPF9N25CT
ON/ST
4822
1.31
MY Group (Asia) Limited
FQPF9N25CT
ON/CMD
5082
2.17
SUMMER TECH(HK) LIMITED
FQPF9N25CT
ON/SANYO
3261
3.03
Ande Electronics Co., Limited
FQPF9N25CT
ONSEM
6272
3.89
HONGKONG LINK E-TECHNOLOGY CO., LIMITED