Part Number | FQPF6N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 3.6A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 44W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF6N60
ONSEMICON
220360
0.54
Cinty Int'l (HK) Industry Co., Limited
FQPF6N60
ON/ST
49850
1.4375
Z.H.T TECHNOLOGY HK LIMITED
FQPF6N60
ON/CMD
1860
2.335
Yingxinyuan INT'L (Group) Limited
FQPF6N60
ON/SANYO
16800
3.2325
Ande Electronics Co., Limited
FQPF6N60
ONSEM
1400
4.13
Hong Kong In Fortune Electronics Co., Limited