Part Number | FQPF6N25 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 250V 4A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 37W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF6N25
ONSEMICON
7779
0.1
HK HEQING ELECTRONICS LIMITED
FQPF6N25
ON/ST
4938
1.2125
ATLANTIC TECHNOLOGY LIMITED
FQPF6N25
ON/CMD
5350
2.325
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF6N25
ON/SANYO
598
3.4375
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQPF6N25
ONSEM
9930
4.55
Yingxinyuan INT'L (Group) Limited