Description
Datasheet Jun 30, 2010 FQPF50N06 . C20. 220n. -. + MGL. Vbat. VBAT. VBAT. F115A. R381k. LED6. RED. R39. 4k7. ZD9. 4.7V. 3. 2. 1. U6A. LM358. R40. 2K. VR1.
Part Number | FQPF50N06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 31A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1540pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 47W (Tc) |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 15.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF50N06
ONSEMICON
1800
1.5
Norric Electronics (HK) Limited
FQPF50N06
ON/ST
10000
2.4175
Hong Kong Capital Industrial Co.,Ltd
FQPF50N06
ON/CMD
49850
3.335
Hong Kong H.D.W Trading Co., Limited
FQPF50N06
ON/SANYO
491
4.2525
Yingxinyuan INT'L (Group) Limited
FQPF50N06
ONSEM
11050
5.17
Ande Electronics Co., Limited