Part Number | FQPF4N20L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 3A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 27W (Tc) |
Rds On (Max) @ Id, Vgs | 1.35 Ohm @ 1.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF4N20L
ONSEMICON
1000
1.78
HK HEQING ELECTRONICS LIMITED
FQPF4N20L
ON/ST
1000
2.625
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
FQPF4N20L
ON/CMD
19000
3.47
Ande Electronics Co., Limited
FQPF4N20L
ON/SANYO
2300
4.315
Cicotex Electronics (HK) Limited
FQPF4N20L
ONSEM
11
5.16
Yingxinyuan INT'L (Group) Limited