Part Number | FQPF3N90 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 900V 2.1A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 43W (Tc) |
Rds On (Max) @ Id, Vgs | 4.25 Ohm @ 1.05A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF3N90
ONSEMICON
1505
1.41
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF3N90
ON/ST
1000
2.16
MY Group (Asia) Limited
FQPF3N90
ON/CMD
5252
2.91
ATLANTIC TECHNOLOGY LIMITED
FQPF3N90
ON/SANYO
43
3.66
ASSET GREEN TECH, INC
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ONSEM
26801
4.41
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED