Part Number | FQPF2NA90 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 900V 1.7A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 39W (Tc) |
Rds On (Max) @ Id, Vgs | 5.8 Ohm @ 850mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF2NA90
ONSEMICON
1000
1.7
MY Group (Asia) Limited
FQPF2NA90
ON/ST
13501
2.8175
ATLANTIC TECHNOLOGY LIMITED
FQPF2NA90
ON/CMD
1035
3.935
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF2NA90
ON/SANYO
35050
5.0525
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQPF2NA90
ONSEM
765
6.17
Yingxinyuan INT'L (Group) Limited