Part Number | FQPF2N80YDTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V TO-220-3 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 6.3 Ohm @ 750mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F-3 (Y-Forming) |
Package / Case | TO-220-3 Full Pack, Formed Leads |
Image |
FQPF2N80YDTU
ONSEMICON
200000
1.82
Shenzhen WTX Capacitor Co., Ltd.
FQPF2N80YDTU
ON/ST
1600
2.5525
HK HEQING ELECTRONICS LIMITED
FQPF2N80YDTU
ON/CMD
1600
3.285
Gallop Great Holdings (Hong Kong) Limited
FQPF2N80YDTU
ON/SANYO
55000
4.0175
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQPF2N80YDTU
ONSEM
4100
4.75
CIS Ltd (CHECK IC SOLUTION LIMITED)