Description
DATASHEET Jan 8, 2016 Unit Type. FQPF27P06 . FQPF27P06 . TO220F-3. Jan 08, 2016. 1.0. FSSZ. 2.11234 g. Each. Manufacturing Process Information. Terminal Finish. Jul 18, 2016 FQPF27P06 . TO220F-3. FSSZ. FSSZ. 2.11234. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp.
Part Number | FQPF27P06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 60V 17A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 47W (Tc) |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 8.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF27P06
ONSEMICON
35244
1.8
HK HEQING ELECTRONICS LIMITED
FQPF27P06 MOS()
ON/ST
25356
3.135
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF27P06
ON/CMD
3000
4.47
Shenzhen Qiangneng Electronics Co., Ltd.
FQPF27P06
ON/SANYO
37396
5.805
ShenZhen Inborun Technology Co.Ltd
FQPF27P06
ONSEM
23862
7.14
Yingxinyuan INT'L (Group) Limited