Part Number | FQPF1N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 0.9A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 21W (Tc) |
Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 450mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF1N60
ONSEMICON
20000
1.05
ZHW High-tech (HK) Co., Limited
FQPF1N60
ON/ST
1000
1.7825
MY Group (Asia) Limited
FQPF1N60
ON/CMD
18000
2.515
MASSTOCK ELECTRONICS LIMITED
FQPF1N60
ON/SANYO
70000
3.2475
ALPINE ELECTRONICS LTD
FQPF1N60
ONSEM
50
3.98
Hongkong K.L.N Electronic Technology Co., Ltd.