Part Number | FQPF19N20T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 11.8A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 11.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 5.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
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FQPF19N20T
ONSEMICON
7429
1.5
MY Group (Asia) Limited
FQPF19N20T
ON/ST
8773
1.9725
MASSTOCK ELECTRONICS LIMITED
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ON/CMD
5293
2.445
Hongkong K.L.N Electronic Technology Co., Ltd.
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6031
2.9175
Hongkong Rixin International Trading Company
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ONSEM
7554
3.39
Bonase Electronics (HK) Co., Limited