Part Number | FQPF19N10L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 13.6A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 13.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 6.8A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF19N10L
ONSEMICON
29800
1.71
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF19N10L
ON/ST
18008
2.55
Xia Song Electronics Co., Limited
FQPF19N10L
ON/CMD
1000
3.39
MY Group (Asia) Limited
FQPF19N10L
ON/SANYO
2000
4.23
Yingxinyuan INT'L (Group) Limited
FQPF19N10L
ONSEM
138004
5.07
Cicotex Electronics (HK) Limited